2003. 3. 25 1/2 semiconductor technical data ktc9014s epitaxial planar npn transistor revision no : 1 general purpose application. switching application. features h excellent h fe linearity : h fe (i c =0.1ma)/h fe (i c =2ma)=0.95(typ.). h low noise :nf=1db(typ.) at f=1khz. h complementary to ktc9015s. maximum rating (ta=25 ? ) dim millimeters sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q 1. emitter 2. base 3. collector electrical characteristics (ta=25 ? ) note : h fe classification b:100 q 300, c:200 q 600, d:400 q 1000 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 50 na emitter cut-off current i ebo v eb =5v, i c =0 - - 100 na dc current gain h fe (note) v ce =5v, i c =1ma 100 - 1000 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v transition frequency f t v ce =10v, i c =1ma, f=100mhz 60 - - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2.0 3.5 pf noise figure nf v ce =6v, i c =0.1ma, rg=10k ? , f=1khz - 1.0 10 db characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma emitter current i e -150 ma collector power dissipation p c * 350 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? * p c : package mounted on 99.5% alumina (10 ? 8 ? 0.6 x ) h rank type name marking lot no. bd fe
2003. 3. 25 2/2 ktc9014s revision no : 1 ce(sat) collector current i (ma) v - i collector-emitter saturation c i - v (low voltage region) cce ce collector-emitter voltage v (v) 0 1 40 c 0 collector current i (ma) dc current gain h fe 500 collector current i (ma) c c fe h - i 23456 80 120 160 240 200 i =0.2ma 0 0.5 1.0 6.0 5.0 3.0 2.0 b common emitter ta=25 c 0.1 0.3 1 3 10 300 30 100 10 30 50 100 300 common emitter ta =100 c ta =-25 c ta =25 c v =6v ce ce v =1v ce v =10v c voltage v (v) ce(sat) ta =100 c ta =-2 5 c ta =25 c ta =100 c ta =-25 c ta =25 c ta =25 c transition frequency f (mhz) t 1k 500 emitter current i (ma) e e t f - i -0.1 -0.3 -1 -3 -10 -300 -30 -100 10 30 50 100 300 common emitter 0.5 0.1 0.3 1 3 10 300 30 100 0.01 0.03 0.05 0.1 0.3 common emitter base current i ( a) b base-emitter voltage v (v) be i - v bbe common emitter v =6v ce i /i =10 cb collector power dissipation pc (mw) 0 0 ambient temperature ta ( c) pc - ta 25 50 75 100 125 150 175 100 200 300 400 500 mounted on 99.5% alumina 10 x 8 x 0.6mm ta=25 c 1 2 1 2 0 0.3 1 3 10 30 100 300 1k 2k 0.2 0.4 0.6 0.8 1.0 1.2
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